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KTH Royal Institute of Technology

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Doctoral student in SiC bipolar devices for power electronics KTH Royal Institute of Technology in Sweden

Degree Level

PhD

Field of study

Electrical Engineering

Funding

Full funding available

Deadline

Aug 31, 2026

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Country

Sweden

University

KTH Royal Institute of Technology

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Keywords

Electrical Engineering
Materials Science
Energy Engineering
Electric Vehicle
Silicon Technology
Industrial Automation
Device Fabrication
Silicon Carbide
Power Electronic
Physics

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About this position

Doctoral student in SiC bipolar devices for power electronics at KTH Royal Institute of Technology (School of Electrical Engineering and Computer Science), Stockholm, Sweden.

This PhD project focuses on Silicon Carbide (SiC) bipolar junction transistor (BJT) and insulated gate bipolar transistor (IGBT) devices for next-generation power electronics. The research aims to improve energy efficiency, performance, and reliability for applications in renewable energy, electric vehicles, and industrial automation.

The work includes fabrication and characterization of new devices in KTH’s Electrum Laboratory, with emphasis on semiconductor process technology and device performance enhancement. The PhD will be part of an internationally recognized SiC research group and the EU project WBG Pilot line.

Supervision: Prof. Per-Erik Hellström is proposed to supervise the doctoral student.

Eligibility: Applicants must have a second-cycle degree (for example a master’s degree), or at least 240 higher education credits including 60 second-cycle credits, or equivalent knowledge. English proficiency equivalent to English B/6 is required. Experience in power semiconductor devices and semiconductor process technology is an advantage.

Funding: Doctoral student employment with monthly salary according to KTH’s doctoral student salary agreement. Full-time temporary position.

Application: Submit the application through KTH’s recruitment system with diplomas, transcripts, proof of language requirements, CV, motivation letter, and representative publications/technical reports. Deadline: 31 August 2026.

Funding details

Full funding including tuition fees and living expenses is available for this position. The scholarship covers all educational costs and provides a monthly stipend.

How to apply

Please submit your application including a cover letter, CV, academic transcripts, and contact information for two references. Applications should be sent via the online portal before the deadline.

More information can be found here

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